Theoretical study on the possibility of bipolar doping of ScN

نویسنده

  • G. Soto
چکیده

Scandium nitride (ScN) is a semiconducting transition metal nitride for which there are not identified dopants. We present local density functional calculations, in supercell approach, for ScN doped with O and C in N-sites and Ca and Ti in Sc-sites. Small additions of these atoms have the effect of shifting the Fermi level within the electronic band structure. O and Ti bring occupied states in bottom of conduction band, while C and Ca produces holes in top of valence band. Based on the theory we propose that bipolar doping is possible to scandium nitride. PACS: 71.15.-m; 71.20.-b; 71.55.-i

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تاریخ انتشار 2008